Title :
High-performance single-mode AlGaAs Gaussian channel substrate planar laser diodes
Author_Institution :
M/A-COM Laser Diode, Inc., New Brunswick, USA
Abstract :
Stable fundamental transverse and single longitudinal mode CW behaviour is demonstrated using a Gaussian channel substrate planar waveguide laser. Highly reliable performance including low threshold current, extremely low spontaneous background level and high-power CW operation has been achieved. In addition, the longitudinal mode has a locking range of 7.8°C, where the wavelength changes at a rate of 0.6 Å/°C.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser modes; semiconductor junction lasers; Gaussian channel substrate planar waveguide laser; high-power CW operation; locking range; low threshold current; single longitudinal mode CW behaviour; spontaneous background level; stable fundamental transverse mode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830002
