Fast processing of 4 in silicon wafers using two 150 W halogen lamps

We describe a very simple annealing system in which two 150 W halogen lamps are scanned on a Si wafer. Electrical and structural measurements indicate complete activation of the impurities without any appreciable diffusion and a good recovery of the damaged lattice. Moreover, two key processing requirements are satisfied: highly uniform sheet resistance across the wafer (standard deviation 3.5%) and the absence of induced warping of the wafer.