Title :
ZnO Nanowire Field-Effect Transistors
Author :
Chang, Pai-Chun ; Lu, Jia Grace
Author_Institution :
Dept. of Phys. & Astron., Univ. of Southern California, Los Angeles, CA
Abstract :
Owing to the extraordinary properties and prominent applications in emerging nanoelectronics, ZnO nanowire has attracted tremendous research effort. This paper provides an introductory overview, covering topics ranging from basic nanowire synthesis and fundamental electrical properties to device characteristics based on field-effect transistor configuration.
Keywords :
II-VI semiconductors; electrical conductivity; field effect transistors; nanowires; wide band gap semiconductors; zinc compounds; FET; ZnO; electrical conduction; electrical properties; nanowire field-effect transistors; nanowire synthesis; Crystallization; FETs; Magnetoelectronics; Nanoelectronics; Nanoscale devices; Nanotechnology; Photonic band gap; Speech synthesis; Temperature sensors; Zinc oxide; Electrical conduction; ZnO; field-effect transistor (FET); nanowire;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2008.2005181
