• DocumentCode
    982799
  • Title

    ZnO Nanowire Field-Effect Transistors

  • Author

    Chang, Pai-Chun ; Lu, Jia Grace

  • Author_Institution
    Dept. of Phys. & Astron., Univ. of Southern California, Los Angeles, CA
  • Volume
    55
  • Issue
    11
  • fYear
    2008
  • Firstpage
    2977
  • Lastpage
    2987
  • Abstract
    Owing to the extraordinary properties and prominent applications in emerging nanoelectronics, ZnO nanowire has attracted tremendous research effort. This paper provides an introductory overview, covering topics ranging from basic nanowire synthesis and fundamental electrical properties to device characteristics based on field-effect transistor configuration.
  • Keywords
    II-VI semiconductors; electrical conductivity; field effect transistors; nanowires; wide band gap semiconductors; zinc compounds; FET; ZnO; electrical conduction; electrical properties; nanowire field-effect transistors; nanowire synthesis; Crystallization; FETs; Magnetoelectronics; Nanoelectronics; Nanoscale devices; Nanotechnology; Photonic band gap; Speech synthesis; Temperature sensors; Zinc oxide; Electrical conduction; ZnO; field-effect transistor (FET); nanowire;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2008.2005181
  • Filename
    4668572
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=982799