Electrical Characteristics and Thermal Stability of $\hbox {Hf}_{x}\hbox {Ta}_{y}\hbox {Si}_{z}\hbox {N}$ Metal Gate Electrode for Advanced MOS Devices

To continuously improve device performance with the shrinkage of device dimension, some novel devices like fully depleted silicon-on-insulator and symmetric double-gate transistor have been proposed. Various Hf_xTa_ySi_zN metal gate electrodes were developed in this paper to achieve work function near the midgap and excellent thermal stability. Furthermore, this paper also demonstrated a good metal gate candidate, Hf_0.19Ta_0.41Si_0.26N_0.14, possessing excellent electrical performances in hysteresis effect, interface trap density, stress-induced leakage current, and excellent thermal stability as well.