Title :
Deformation-free overgrowth of InGaAsP DFB corrugations
Author :
Nelson, A.W. ; Westbrook, L.D. ; Evans, Jamie S.
Author_Institution :
British Telecom Research Laboratories, Ipswich, UK
Abstract :
A hybrid LPE/MOCVD growth procedure is described which enables ¿ = 1.55 ¿m distributed feedback laser structures to be fabricated without deformation of the corrugated region of the device. Depths of corrugations remaining after overgrowth using this process are typically 1600 Å. Conditions under which deformation does occur are also presented.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; liquid phase epitaxial growth; semiconductor junction lasers; vapour phase epitaxial growth; III-V semiconductors; InGaAsP distributed feedback lasers; deformation-free overgrowth; hybrid LPE/MOCVD growth procedure;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830026
