Title :
A New Strained-Silicon Channel Trench-Gate Power MOSFET: Design and Analysis
Author :
Saxena, Raghvendra S. ; Kumar, M. Jagadesh
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol., New Delhi
Abstract :
In this brief, we propose a new trench power MOSFET with strained-Si channel that provides lower on-resistance than the conventional trench MOSFET. Using a 20% Ge mole fraction in the Si1- Gex body with a compositionally graded Si1 - xGex buffer in the drift region enables us to create strain in the channel along with graded strain in the accumulation region. As a result, the proposed structure exhibits 40% enhancement in current drivability,28% reduction in the on-resistance, and 72% improvement in peak transconductance at the cost of only 12% reduction in the breakdown voltage when compared to the conventional trench-gate MOSFET. Furthermore, the graded strained accumulation region supports the confinement of carriers near the trench sidewalls, improving the field distribution in the mesa structure useful for a better damage immunity during inductive switching.
Keywords :
Ge-Si alloys; elemental semiconductors; power MOSFET; semiconductor device breakdown; semiconductor device models; silicon; Si1-x-Gex-Si; breakdown voltage reduction; carrier confinement; current drivability; damage immunity; graded strained accumulation; inductive switching; mesa structure; mole fraction; strained-silicon channel; trench-gate power MOSFET design; Buffer layers; Capacitive sensors; Carrier confinement; Fabrication; Immune system; MOSFET circuits; Power MOSFET; Silicon; Transconductance; Voltage; $hbox{Si}_{1 - x}hbox{Ge}_{x}$; Breakdown voltage; on-resistance; power MOSFET; strained Si; trench gate;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2008.2004645
