Title :
Substrate bias effect for C-MOS operational amplifier using SIMOX technology
Author :
Akiya, M. ; Kimura, T.
Author_Institution :
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Abstract :
The substrate bias effect for SIMOX devices is described. By setting the substrate bias voltage to the accumulation mode in the bulk, the kink onset voltage for the N-ch MOSFET has been found to increase. Open-loop voltage gain for a C-MOS two-stage operational amplifier has been enhanced up to 65 dB.
Keywords :
field effect integrated circuits; integrated circuit technology; operational amplifiers; C-MOS operational amplifier; MOSFET; SIMOX technology; accumulation mode; integrated circuit technology; kink onset voltage; open loop voltage; substrate bias effect;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830027
