Title :
Special Issue on Nanowire Transistors: Modeling, Device Design, and Technology
Author :
Kumar, M.J. ; Reed, Mark A. ; Amaratunga, Gehan ; Cohen, Guy M. ; Janes, David B. ; Lieber, C.M. ; Meyyappan, M. ; Wernersson, Lars-Erik ; Wang, K.L. ; Chau, R.S. ; Kamins, Theodore I. ; Lundstrom, Mark ; Bin Yu ; Chongwu Zhou
Abstract :
The primary goal of this special issue is, therefore, to compile advances in different aspects of nanowire-based devices including device physics and modeling, device design, characterization techniques, technology, and applications so that this special issue will not only be of great archival value but also attract new researchers into this area for further accelerating the application of nanowires in building cheaper and higher performance electronic systems.
Keywords :
MOSFET; nanoelectronics; nanowires; semiconductor device models; semiconductor materials; semiconductor technology; MOSFET downscaling; device characterization techniques; nanowire transistor technology; nanowire transistors modeling; semiconductor nanowire devices; transistors device design;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2008.2006781
