Title :
S-parameter model of dual-gate GaAs MESFET
Author :
Ashoka, H. ; Tucker, R.S.
Author_Institution :
University of Queensland, Department of Electrical Engineering, Brisbane, Australia
Abstract :
A simple modelling procedure for the dual-gate MESFET is presented. The model is based on a cascoded connection of two single-gate devices, with each device represented in terms of its s-parameters. These s-parameters are obtained from the overall dual-gate MESFET s-parameters, using accurate deembedding techniques.
Keywords :
III-V semiconductors; S-parameters; Schottky gate field effect transistors; gallium arsenide; semiconductor device models; III-V semiconductor; S-parameter model; accurate deembedding techniques; dual-gate GaAs MESFET;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830029
