Title :
Study of deep level in bulk P-InP by admittance spectroscopy
Author :
Kuo, J.M. ; Thiel, F.A.
Author_Institution :
North Carolina State University, Department of Electrical Engineering, Raleigh, USA
Abstract :
We report the application of diode admittance spectroscopy in characterising traps in Mg-doped InP. Measurements performed on Au-InP Schottky diodes have identified a hole trap located 0.15 eV above the valence band of InP. Other characteristic parameters such as trap density and hole capture cross-section have also been determined, with results suggesting hole capture at a neutral trapping centre.
Keywords :
III-V semiconductors; deep levels; hole traps; indium compounds; Au-InP Schottky diodes; III-V semiconductors; InP:Mg; bulk P-InP; deep level; diode admittance spectroscopy; hole capture cross-section; hole trap; trap density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830031
