Title :
Si, SiGe Nanowire Devices by Top–Down Technology and Their Applications
Author :
Singh, Navab ; Buddharaju, Kavitha D. ; Manhas, S.K. ; Agarwal, A. ; Rustagi, Subhash C. ; Lo, G.Q. ; Balasubramanian, N. ; Kwong, Dim-Lee
Author_Institution :
Inst. of Microelectron., Singapore
Abstract :
Nanowire (NW) devices, particularly the gate-all-around (GAA) CMOS architecture, have emerged as the front-runner for pushing CMOS scaling beyond the roadmap. These devices offer unique advantages over their planar counterparts which make them feasible as an option for 22 -nm and beyond technology nodes. This paper reviews the current technology status for realizing the GAA NW device structures and their applications in logic circuit and nonvolatile memories. We also take a glimpse into applications of NWs in the ldquomore-than-Moorerdquo regime and briefly discuss the application of NWs as biochemical sensors. Finally, we summarize the status and outline the challenges and opportunities of the NW technology.
Keywords :
CMOS integrated circuits; Ge-Si alloys; MOSFET; biological techniques; chemical sensors; elemental semiconductors; logic circuits; nanowires; random-access storage; semiconductor materials; semiconductor quantum wires; silicon; Si; SiGe; biochemical sensor application; gate-all-around CMOS architecture; logic circuit applications; nanowire devices; nonvolatile memory applications; top-down technology; CMOS technology; Degradation; Doping; Germanium silicon alloys; High K dielectric materials; High-K gate dielectrics; MOSFETs; Nanoscale devices; Nonvolatile memory; Silicon germanium; Gate-all-around (GAA) nanowire (NW) transistors; NW CMOS; NW logic; Nonvolatile memory (NVM); top–down technology;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2008.2005154
