Title :
Planar InP/InGaAs-APD with a guardring formed by Cd diffusion through SiO2
Author :
Ikeda, Makoto ; Wakita, Ken ; Hata, Satoshi ; Kondo, Satoshi ; Kanbe, H.
Author_Institution :
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Abstract :
A graded junction, with a breakdown voltage twice as high as that for an abrupt junction, was formed in n-InP by Cd diffusion through SiO2 film. Planar-type InP/InGaAs-APDs with this graded junction for a guardring showed a uniform multiplication gain over the whole sensitive area with no local breakdown. Cd diffusion through SiO2 was revealed to be very useful for formation of the guardring.
Keywords :
III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; Cd diffusion; III-V semiconductors; SiO2; guarding; planar InP-InGaAs avalanche photodiode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830045
