• DocumentCode
    983076
  • Title

    Planar InP/InGaAs-APD with a guardring formed by Cd diffusion through SiO2

  • Author

    Ikeda, Makoto ; Wakita, Ken ; Hata, Satoshi ; Kondo, Satoshi ; Kanbe, H.

  • Author_Institution
    NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
  • Volume
    19
  • Issue
    2
  • fYear
    1983
  • Firstpage
    61
  • Lastpage
    62
  • Abstract
    A graded junction, with a breakdown voltage twice as high as that for an abrupt junction, was formed in n-InP by Cd diffusion through SiO2 film. Planar-type InP/InGaAs-APDs with this graded junction for a guardring showed a uniform multiplication gain over the whole sensitive area with no local breakdown. Cd diffusion through SiO2 was revealed to be very useful for formation of the guardring.
  • Keywords
    III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; Cd diffusion; III-V semiconductors; SiO2; guarding; planar InP-InGaAs avalanche photodiode;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830045
  • Filename
    4247213
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=983076