DocumentCode :
983089
Title :
Integration of Self-Assembled Metal-Catalyzed Semiconductor Nanowires for Sensors and Large-Area Electronics
Author :
Kamins, Theodore I.
Author_Institution :
Inf. & Quantum Syst. Lab., Palo Alto, CA
Volume :
55
Issue :
11
fYear :
2008
Firstpage :
3096
Lastpage :
3106
Abstract :
In this paper, we discuss methods of positioning nanowires at desired locations on a substrate to explore which techniques are most suitable for different potential applications, with an emphasis on Si nanowires. We focus most attention on growing the nanowires at the position where they will be used. We discuss forming one connection during growth for mechanically resonant sensors and making two connections during growth for field-effect sensors. Next, we discuss in less detail repositioning nanowires from a growth substrate onto a final substrate, with focus on potential applications in large-area electronics, such as displays, or electronics on a low-temperature substrate. Finally, we briefly consider possible catalyst materials and explore potential concerns with the widely used Au catalyst.
Keywords :
elemental semiconductors; field effect devices; gold; monolithic integrated circuits; nanowires; self-assembly; sensors; silicon; Au; Si; catalyst materials; displays; field-effect sensors; large-area electronics; mechanically resonant sensors; nanostructured growth; self-assembled metal-catalyzed semiconductor nanowires; sensors; Displays; Gold; Heterojunctions; Integrated circuit interconnections; Logic devices; Nanowires; Resonance; Self-assembly; Semiconductor materials; Substrates; Nanotechnology; semiconductor devices; semiconductor materials; sensors; transducers;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2008.2005177
Filename :
4668598
Link To Document :
بازگشت