High-efficiency InP-based HEMT MMIC power amplifier for Q-band applications

Author

Lam, W. ; Matloubian, M. ; Kurdoghlian, A. ; Larson, L. ; Igawa, A. ; Chou, C. ; Jelloian, L. ; Brown, A. ; Thompson, M. ; Ngo, C.

Author_Institution

Microelectron. Circuits Div., Hughes Aircraft Co., Torrance, CA, USA

Volume

3

Issue

11

fYear

1993

Firstpage

420

Lastpage

422

Abstract

Advanced millimeter-wave systems require high efficiency MMIC power amplifiers to reduce physical size, weight, and prime power consumption. A high-efficiency MMIC power amplifier was developed using 0.15 um InP-based (Al/sub 0.48/In/sub 0.52/As-Ga/sub 0.47/In/sub 0.53/As) HEMT MMIC technology. The amplifier demonstrated state-of-the-art power performance, including 33% power-added efficiency and 24 dBm output power at 44 GHz. Potential applications include communication terminals and phased array antennas.<>

Keywords

III-V semiconductors; MMIC; equivalent circuits; field effect integrated circuits; high electron mobility transistors; indium compounds; microwave amplifiers; power amplifiers; 0.15 micron; 33 percent; 44 GHz; Al/sub 0.48/In/sub 0.52/As-Ga/sub 0.47/In/sub 0.53/As-InP; EHF; InP; InP-based HEMT MMIC; MM-wave type; Q-band applications; high-efficiency; millimeter-wave; power amplifier; Antenna arrays; Energy consumption; HEMTs; High power amplifiers; MMICs; Millimeter wave communication; Millimeter wave technology; Phased arrays; Power amplifiers; Power generation;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.248519

Filename

248519