DocumentCode :
983097
Title :
Electrical Properties of Surface-Tailored ZnO Nanowire Field-Effect Transistors
Author :
Hong, Woong-Ki ; Jo, Gunho ; Kwon, Soon-Shin ; Song, Sunghoon ; Lee, Takhee
Author_Institution :
Dept. of Mater. & Sci. Eng., Gwangju Inst. of Sci. & Technol., Gwangju
Volume :
55
Issue :
11
fYear :
2008
Firstpage :
3020
Lastpage :
3029
Abstract :
A review on the tunable electrical properties of ZnO nanowire field-effect transistors (FETs) is presented. The FETs made from surface-tailored ZnO nanowire exhibit two different types of operation modes, which are distinguished as depletion and enhancement modes in terms of the polarity of the threshold voltage. We demonstrate that the transport properties of ZnO nanowire FETs are associated with the influence of nanowire size and surface roughness associated with the presence of surface trap states at the interfaces as well as the surface chemistry in environments.
Keywords :
II-VI semiconductors; carrier mobility; electron traps; field effect transistors; nanoelectronics; nanowires; semiconductor quantum wires; surface chemistry; surface roughness; wide band gap semiconductors; zinc compounds; ZnO; depletion modes; electronic transport properties; enhancement modes; surface chemistry; surface roughness; surface trap states; surface-tailored nanowire field-effect transistors; tunable electrical properties; Chemistry; FETs; Gold; Nanoscale devices; Passivation; Rough surfaces; Substrates; Surface morphology; Surface roughness; Zinc oxide; Field-effect transistor (FET); ZnO nanowire; passivation; surface roughness;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2008.2005156
Filename :
4668599
Link To Document :
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