Title :
Wave-theoretical analysis of signal propagation on FET electrodes
Author :
Heinrich, Wolfgang ; Hartnagel, H.L.
Author_Institution :
Technische Hochschule Darmstadt, Institut fÿr Hochfrequenztechnik, Darmstadt, West Germany
Abstract :
A wave-theoretical analysis of MESFET electrode structures is undertaken, incorporating losses of both the semiconducting layer and the finite conductivity of the electrodes. It is shown that the relevant microwave FET mode has slow-wave properties with a slowing factor of about 6.
Keywords :
Schottky gate field effect transistors; power transistors; semiconductor device models; MESFET electrode structures; microwave power transistors; semiconductor device models; wave-theoretical analysis;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830048
