Title :
New ultra-high-speed GaAs strobed comparators
Author :
Meignant, D. ; Binet, M.
Author_Institution :
Laboratoires d´Electronique et de Physique Appliquée, Limeil-Brÿvannes, France
Abstract :
In the fastest analogue to digital (A/D) convertors, the analogue voltage is applied in parallel to an array of 2n ¿ 1 comparators for a simultaneous comparison with a like number of reference voltages. The key element in the parallel A/D convertor is the voltage comparator because it can limit both the speed and the precision. The letter describes a new comparator using GaAs MESFETs designed for parallel A/D convertors operation at gigabit sampling rates.
Keywords :
III-V semiconductors; analogue-digital conversion; comparators (circuits); field effect integrated circuits; gallium arsenide; integrated logic circuits; A/D convertors; III-V semiconductor; MESFETs; integrated logic circuits; ultra-high-speed GaAs strobed comparators;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830049