DocumentCode :
983120
Title :
On an InGaP/InGaAs Double Channel Pseudomorphic High Electron Mobility Transistor With Graded Triple \\delta -Doped Sheets
Author :
Chen, Li-Yang ; Cheng, Shiou-Ying ; Chen, Tzu-Pin ; Chu, Kuei-Yi ; Tsai, Tsung-Han ; Liu, Yi-Chun ; Liao, Xin-Da ; Liu, Wen-Chau
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan
Volume :
55
Issue :
11
fYear :
2008
Firstpage :
3310
Lastpage :
3313
Abstract :
An interesting InGaP/InGaAs double channel pseudomorphic high electron mobility transistor is fabricated and demonstrated. Due to the employed InGaP Schottky and buffer layers, InGaAs double channel structure, and graded triple delta-doped sheets, both DC and RF performances are improved. From experimental results, the studied device, with a gate dimension of 0.8 x 100 mum2 , shows a drain saturation current of 176 mA/mm, a maximum extrinsic transconductance of 176 mS/mm, a unity current gain cutoff frequency of 16 GHz, and a maximum oscillation frequency of 33.2 GHz at room temperature. Moreover, a theoretical analysis based on a 2-D semiconductor simulation package is used to study the device properties and compare the experimental results. Good agreement between the theoretical analyses and experimental results is found.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; high electron mobility transistors; indium compounds; semiconductor doping; 2-D semiconductor simulation package; InGaP-InGaAs; Schottky layers; buffer layers; double channel pseudomorphic high electron mobility transistor; drain saturation current; extrinsic transconductance; frequency 16 GHz; frequency 33.2 GHz; graded triple delta-doped sheets; Buffer layers; Cutoff frequency; Electron mobility; HEMTs; Indium gallium arsenide; MODFETs; PHEMTs; Radio frequency; Temperature; Transconductance; Double channel; graded delta-doped sheet; high electron mobility transistor (HEMT);
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2008.2005126
Filename :
4668600
Link To Document :
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