Network representations of LIGBT structures for CAD of power integrated circuits

Author

Fossum, Jerry G. ; McDonald, Robert J. ; Shibib, M. Ayman

Author_Institution

Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA

Volume

35

Issue

4

fYear

1988

fDate

4/1/1988 12:00:00 AM

Firstpage

507

Lastpage

515

Abstract

To enable computer-aided design (CAD) of power integrated circuits, physical models for lateral high-voltage/power (HV/P) devices, in particular lateral insulated-gate bipolar transistor (LIGBT) structures, are developed and implemented in SPICE. The models are charge-based, and, via regional partitioning, account for the unique features of HV/P devices unaccounted for in conventional equivalent-circuit models. The implementation of the models in the circuit simulator is flexible and allows these features (e.g. multidimensional carrier flow, conductivity modulation, latchup, transcapacitance) to be simulated without having to sacrifice much physics through excessive empiricism. Device measurement of specially designed test structures, supplemented with two-dimensional numerical device simulations, support the modeling methodology and the model parameter extraction

Keywords

CAD; bipolar transistors; equivalent circuits; power integrated circuits; power transistors; semiconductor device models; 2D simulation; CAD; LIGBT structures; SPICE; computer-aided design; conductivity modulation; latchup; lateral insulated-gate bipolar transistor; model parameter extraction; modeling methodology; multidimensional carrier flow; network representation; physical models; power device unique features; power integrated circuits; regional partitioning; specially designed test structures; transcapacitance; two-dimensional numerical device simulations; Circuit simulation; Conductivity; Design automation; Flexible printed circuits; Insulated gate bipolar transistors; Insulation; Integrated circuit modeling; Multidimensional systems; Power integrated circuits; SPICE;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.2486

Filename

2486