Title :
Strained Silicon Nanowire Transistors With Germanium Source and Drain Stressors
Author :
Liow, Tsung-Yang ; Tan, Kian-Ming ; Lee, Rinus Tek Po ; Zhu, Ming ; Tan, Ben LianHuat ; Balasubramanian, N. ; Yeo, Yee-Chia
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore
Abstract :
We report the first demonstration of pure germanium (Ge) source/drain (S/D) stressors on the ultranarrow or ultrathin Si S/D regions of nanowire FETs with gate lengths down to 5 nm. Ge S/D compressively strains the channel to provide up to ~ 100% I Dsat enhancement. We also introduce a novel Melt-Enhanced Dopant diffusion and activation technique to form fully embedded Si0.15Ge0.85 S/D stressors in nanowire FETs, further boosting the channel strain and achieving ~ 125% I Dsat enhancement.
Keywords :
Ge-Si alloys; diffusion; field effect transistors; nanoelectronics; nanowires; semiconductor materials; CMOS process; Si0.15Ge0.85; drain stressors; field-effect transistors; germanium source; melt-enhanced dopant diffusion; silicon-germanium stressors; strained silicon nanowire transistors; Capacitive sensors; Chemicals; FETs; Germanium silicon alloys; Hafnium; Microelectronics; Plasma applications; Plasma chemistry; Silicon germanium; Wet etching; Germanium stressors; silicon–germanium stressors; strained silicon nanowires;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2008.2005153
