Title :
One watt CW visible single-quantum-well lasers
Author :
Lindstr¿¿m, C. ; Burnham, R.D. ; Scifres, D.R. ; Paoli, T.L. ; Streifer, W.
Author_Institution :
Xerox Palo Alto Research Centers, Palo Alto, USA
Abstract :
We report room-temperature CW high output power (1 W) at ~ 7770 Å from OM-VPE-grown ultra-thin single-quantum (~60 Å)-well lasers. The devices are broad-area (250 × 210 ¿m) lasers with a quantum-well GaAlAs active region doped with Mg, and with applied high reflective and low reflective mirror facets. For an output power of 1 W from the emitting facet, the DC-to-light conversion efficiency is as high as 21%.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; magnesium; semiconductor junction lasers; vapour phase epitaxial growth; 1 W; CW visible single-quantum-well lasers; GaAlAs; III-V semiconductor; Mg; OM-VPE growth; mirror facets;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830057
