Title :
80-Gb/s Low-Driving-Voltage InP DQPSK Modulator With an n-p-i-n Structure
Author :
Kikuchi, Nobuhiro ; Shibata, Yasuo ; Tsuzuki, Ken ; Sanjoh, Hiroaki ; Sato, Tomonari ; Yamada, Eiichi ; Ishibashi, Tadao ; Yasaka, Hiroshi
Author_Institution :
Photonics Labs., NTT Corp., Kanagawa
fDate :
6/15/2009 12:00:00 AM
Abstract :
We present a traveling-wave-electrode InP-based differential quadrature phase-shift keying modulator with a novel n-p-i-n waveguide structure. The structure features low electrical and optical propagation losses, which allow the modulator to operate at a high bit rate together with a low driving voltage and a low insertion loss. We successfully demonstrate 80-Gb/s modulation with a driving voltage of only 3 Vpp in a push-pull configuration. The chip size is just 7.5 mm times 1.3 mm.
Keywords :
III-V semiconductors; differential phase shift keying; indium compounds; optical losses; optical modulation; optical waveguides; quadrature phase shift keying; InP; bit rate 80 Gbit/s; differential quadrature phase-shift keying modulator; electrical propagation loss; insertion loss; low-driving-voltage DQPSK modulator; n-p-i-n waveguide structure; optical propagation loss; push-pull configuration; size 1.3 mm; size 7.5 mm; traveling-wave-electrode; Bit rate; Indium phosphide; Insertion loss; Low voltage; Optical losses; Optical propagation; Optical waveguides; Phase modulation; Phase shift keying; Propagation losses; Optical modulation; quadrature phase-shift keying; semiconductor waveguides; traveling wave devices;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2009.2018475
