Title :
CW high-power single-mode operation of gain-guided stripe-geometry multiple-quantum-well lasers
Author :
Lindstr¿¿m, C. ; Burnham, R.D. ; Paoli, T.L. ; Streifer, W. ; Scifres, D.R.
Author_Institution :
Xerox Palo Alto Research Centers, Palo Alto, USA
Abstract :
Stripe-geometry multiple-quantum-well GaAs-GaAlAs lasers grown by MO-CVD are reported to operate fundamental spatial and longitudinal mode up to more than 40 mW CW.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser modes; semiconductor junction lasers; GaAs-GaAlAs lasers; III-V semiconductor; MO-CVD; gain-guided stripe-geometry multiple-quantum-well lasers; longitudinal mode; spatial mode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830075
