DocumentCode :
983356
Title :
Accurate Estimation of SRAM Dynamic Stability
Author :
Khalil, DiaaEldin ; Khellah, Muhammad ; Kim, Nam-Sung ; Ismail, Yehea ; Karnik, Tanay ; De, Vivek K.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Northwestern Univ., Evanston, IL
Volume :
16
Issue :
12
fYear :
2008
Firstpage :
1639
Lastpage :
1647
Abstract :
In this paper, an accurate approach for estimating SRAM dynamic stability is proposed. The conventional methods of SRAM stability estimation suffer from two major drawbacks: 1) using static failure criteria, such as static noise margin (SNM), which does not capture the transient and dynamic behavior of SRAM operation and 2) using quasi-Monte Carlo simulation, which approximates the failure distribution, resulting in large errors at the tails where the desired failure probabilities exist. These drawbacks are eliminated by employing a new distribution-independent, most-probable-failure-point search technique for accurate probability calculation along with accurate simulation-based dynamic failure criteria. Compared to previously published techniques, the proposed technique offers orders of magnitude improvement in accuracy. Furthermore, the proposed technique enables the correct evaluation of stability in real operation conditions and for different dynamic circuit techniques, such as dynamic write-back, where the conventional methods are not applicable.
Keywords :
Monte Carlo methods; SRAM chips; circuit stability; failure analysis; SNM; SRAM dynamic stability; dynamic write-back; failure distribution; quasi-Monte Carlo simulation; static failure criteria; static noise margin; Circuit noise; Circuit simulation; Circuit stability; Fluctuations; Probability distribution; Random access memory; Resource description framework; Stability criteria; Threshold voltage; Yield estimation; Circuit stability; SRAM; process variations; random dopant fluctuation (RDF); yield estimation;
fLanguage :
English
Journal_Title :
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
1063-8210
Type :
jour
DOI :
10.1109/TVLSI.2008.2001941
Filename :
4668629
Link To Document :
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