Title :
10 kHz linewidth 1.5 ¿m InGaAsP external cavity laser with 55 nm tuning range
Author :
Wyatt, R. ; Devlin, W.J.
Author_Institution :
British Telecom Research Laboratories, Ipswich, UK
Abstract :
An InGaAsP 1.5 ¿m laser, with one facet antireflection coated, has been incorporated into a diffraction grating external cavity. The lasing wavelength could be tuned over a 55 nm range about the centre wavelength of 1.5 ¿m by rotating the grating. Furthermore, it was found that the emission spectrum was extremely narrow; beat-frequency measurements at 1523 nm against an HeNe laser showed it to be of the order of 10 kHz.
Keywords :
III-V semiconductors; antireflection coatings; diffraction gratings; gallium arsenide; indium compounds; laser cavity resonators; laser tuning; semiconductor junction lasers; 10 kHz linewidth 1.5 micron InGaAsP laser; HeNe laser; III-V semiconductors; antireflection coating; beat-frequency measurements; diffraction grating; emission spectrum; external cavity laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830079
