Title :
AlN capped annealing of Se and Sn implanted semi-insulating GaAs
Author :
Bensalem, R. ; Barrett, N.J. ; Sealy, B.J.
Author_Institution :
University of Surrey, Department of Electronic & Electrical Engineering, Guildford, UK
Abstract :
High-dose room-temperature implants of Se and Sn in undoped semi-insulating GaAs have been pulse-annealed at 1000°C using AlN as an encapsulant. Good electrical results and an improved surface quality were achieved compared with the use of CVD Si3N4 layers.
Keywords :
III-V semiconductors; annealing; gallium arsenide; ion implantation; selenium; tin; AlN; CVD Si3N4 layers; GaAs:Se,Sn; III-V semiconductor; encapsulant; ion implantation; semiinsulating; surface quality;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830080
