Title :
In situ mass spectrometric investigation of metallised InP samples during annealing
Author :
Mojzes, I. ; Szigethy, D. ; Veresegyh¿¿zy, R.
Author_Institution :
Hungarian Academy of Sciences, Research Institute for Technical Physics, Budapest, Hungary
Abstract :
In situ mass spectrometry was used to study the interaction of the metal-InP system. In the presence of a thin gold layer on the crystal surface the phosphorus yield showed characteristical peak against temperature with a relatively high rate of evaporation. Contact systems containing gallium and indium were also investigated. A thin Ga layer deposited into the gold film eliminated the characteristical phosphorus losses.
Keywords :
III-V semiconductors; annealing; indium compounds; interface structure; mass spectra; ohmic contacts; semiconductor-metal boundaries; Au layer; Ga; III-V semiconductor; annealing; contact systems; mass spectrometric investigation; metal-InP; metallised InP;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830083
