DocumentCode :
983452
Title :
Transistor Internal Parameters for Small-Signal Representation
Author :
Pritchard, R.L. ; Angell, J.B. ; Adler, R.B. ; Early, J.M. ; Webster, W.M.
Author_Institution :
Texas Instruments Inc., Dallas, Tex.
Volume :
49
Issue :
4
fYear :
1961
fDate :
4/1/1961 12:00:00 AM
Firstpage :
725
Lastpage :
738
Abstract :
The joint IRE-AIEE Task Group 28.4.7, on Transistor Internal Parameters, was organized with the following objectives: 1) To formulate a small-signal equivalent-circuit representation of a transistor, the parameters of which emphasize separately the principal physical mechanisms of the device. 2) To recommend symbols for these parameters consistent with accepted usage and other standards. 3) To exhibit the relationship between the equivalent-circuit representation described in item 1 above and those simplified representations commonly employed in circuit analysis or design. 4) To propose and discuss methods of determining these parameters from electrical measurements at the terminals. This report summarizes the work of the group on the first three of these objectives.
Keywords :
Circuit analysis; Conductivity; Electric variables measurement; Frequency; Impedance; Instruments; Measurement standards; Senior members; Telephony; Temperature;
fLanguage :
English
Journal_Title :
Proceedings of the IRE
Publisher :
ieee
ISSN :
0096-8390
Type :
jour
DOI :
10.1109/JRPROC.1961.287843
Filename :
4066399
Link To Document :
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