DocumentCode
983606
Title
Effect of optical injection on bias voltage and spectrum of a semiconductor laser
Author
van Exter, Martin P. ; Biever, C. ; Woerdman, J.P.
Author_Institution
Huygens Lab., Leiden Univ., Netherlands
Volume
29
Issue
11
fYear
1993
fDate
11/1/1993 12:00:00 AM
Firstpage
2771
Lastpage
2779
Abstract
The effect of a mild form of optical injection on the bias voltage and optical spectrum of a Fabry-Perot-type AlGaAs laser has been studied. At small frequency detuning between the injection and the injected laser, injection locking is observed. The change in bias voltage, as a function of detuning, is dispersive-like and asymmetric, From the asymmetry, the α-parameter of the laser is determined. When the detuning is increased beyond the locking range, the effect of optical injection on bias voltage remains noticeable. Additional dispersive-like structures appear around the relaxation oscillation frequency. In the optical spectrum, four-wave mixing and reduced damping of the relaxation oscillations are observed
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; laser mode locking; multiwave mixing; semiconductor lasers; α-parameter; AlGaAs; Fabry-Perot-type AlGaAs laser; asymmetry; bias voltage; detuning; dispersive-like structures; four-wave mixing; injection locking; optical injection; optical spectrum; reduced damping; relaxation oscillation frequency; relaxation oscillations; semiconductor laser; small frequency detuning; Frequency; Injection-locked oscillators; Laser modes; Laser theory; Laser transitions; Nonlinear optics; Optical mixing; Semiconductor lasers; Stimulated emission; Voltage;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/3.248935
Filename
248935
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