• DocumentCode
    983606
  • Title

    Effect of optical injection on bias voltage and spectrum of a semiconductor laser

  • Author

    van Exter, Martin P. ; Biever, C. ; Woerdman, J.P.

  • Author_Institution
    Huygens Lab., Leiden Univ., Netherlands
  • Volume
    29
  • Issue
    11
  • fYear
    1993
  • fDate
    11/1/1993 12:00:00 AM
  • Firstpage
    2771
  • Lastpage
    2779
  • Abstract
    The effect of a mild form of optical injection on the bias voltage and optical spectrum of a Fabry-Perot-type AlGaAs laser has been studied. At small frequency detuning between the injection and the injected laser, injection locking is observed. The change in bias voltage, as a function of detuning, is dispersive-like and asymmetric, From the asymmetry, the α-parameter of the laser is determined. When the detuning is increased beyond the locking range, the effect of optical injection on bias voltage remains noticeable. Additional dispersive-like structures appear around the relaxation oscillation frequency. In the optical spectrum, four-wave mixing and reduced damping of the relaxation oscillations are observed
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; laser mode locking; multiwave mixing; semiconductor lasers; α-parameter; AlGaAs; Fabry-Perot-type AlGaAs laser; asymmetry; bias voltage; detuning; dispersive-like structures; four-wave mixing; injection locking; optical injection; optical spectrum; reduced damping; relaxation oscillation frequency; relaxation oscillations; semiconductor laser; small frequency detuning; Frequency; Injection-locked oscillators; Laser modes; Laser theory; Laser transitions; Nonlinear optics; Optical mixing; Semiconductor lasers; Stimulated emission; Voltage;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/3.248935
  • Filename
    248935