DocumentCode
983629
Title
Semiconductor laser with regrown-lens-train unstable resonator: theory and design
Author
Paxton, Alan H. ; Schaus, Christian F. ; Srinivasan, Swaminathan T.
Author_Institution
Air Force Phillips Lab., Kirtland AFB, NM, USA
Volume
29
Issue
11
fYear
1993
fDate
11/1/1993 12:00:00 AM
Firstpage
2784
Lastpage
2792
Abstract
The authors derive the geometrical optical properties of the fundamental mode of the unstable resonator consisting of a train of weak cylindrical lenses and obtain expressions for the effective distributed loss and the increase in threshold current due to the beam expansion. These properties are the same as for the continuous unstable resonator with a quadratic lateral variation of the index of refraction, to a very good approximation. The wave aberration introduced by passage through the lenses and through the output facet is not severe for stripe widths up to 170 μm. The authors discuss the rationale for selecting a specific transverse structure for the regrown-lens-train laser and present the results of calculations of the waveguide modes and values of the effective index of refraction
Keywords
aberrations; geometrical optics; laser cavity resonators; lenses; optical design techniques; refractive index; semiconductor lasers; beam expansion; continuous unstable resonator; effective distributed loss; fundamental mode; geometrical optical properties; index of refraction; laser resonator; output facet; quadratic lateral variation; regrown-lens-train laser; regrown-lens-train unstable resonator; semiconductor laser; stripe widths; threshold current; transverse structure; wave aberration; waveguide modes; weak cylindrical lenses; Geometrical optics; Laser beams; Laser modes; Lenses; Optical losses; Optical refraction; Optical resonators; Semiconductor lasers; Threshold current; Waveguide lasers;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/3.248937
Filename
248937
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