Title :
A study and optoelectronic verification of AlGaAs/GaAs heterojunction bipolar transistor large-signal characteristics
Author :
Frankel, Michael Y. ; Pavlidis, Dimitris ; Mourou, Gerard A.
Author_Institution :
Solid State Electron. Lab., Michigan Univ., Ann Arbor, MI, USA
fDate :
11/1/1993 12:00:00 AM
Abstract :
A hybrid optoelectronic measurement system is constructed and used to obtain the large-signal characteristics of AlGaAs/GaAs heterojunction bipolar transistors. The measurement system utilizes a terahertz-bandwidth electrooptic transducer gated by 100-fs laser pulses to interrogate the time-domain waveforms at the device input and output nodes. A microwave signal phase-locked to the laser pulse-train is used to synchronously excite the device in both small-signal and large-signal regimes. The measurement system is capable of 50-GHz bandwidth and provides time-domain voltage waveforms that can be used directly to verify the time-domain results of the large-signal analysis
Keywords :
III-V semiconductors; aluminium compounds; bipolar integrated circuits; gallium arsenide; integrated optoelectronics; 100 fs; 50 GHz; AlGaAs-GaAs; AlGaAs/GaAs heterojunction bipolar transistor large-signal characteristics; bipolar integrated circuits; device input; hybrid optoelectronic measurement system; integrated optoelectronics; large-signal analysis; large-signal regimes; laser pulse-train; laser pulses; measurement system; microwave signal phase-locked; optoelectronic verification; output nodes; small-signal; synchronously excite; terahertz-bandwidth electrooptic transducer; time-domain voltage waveforms; time-domain waveforms; Electrooptic devices; Gallium arsenide; Heterojunction bipolar transistors; Lasers and electrooptics; Masers; Optical pulses; Pulse measurements; Submillimeter wave measurements; Time domain analysis; Transducers;
Journal_Title :
Quantum Electronics, IEEE Journal of
