DocumentCode :
983733
Title :
Electromagnetic Analysis of Ring-Cavity-Assisted Amplified Spontaneous Emission in Er:SiO 
/a-Si Horizontal Slot Waveguides
Author :
Redding, Brandon ; Shi, Shouyuan ; Prather, Dennis W.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Delaware, Newark, DE
Volume :
45
Issue :
7
fYear :
2009
fDate :
7/1/2009 12:00:00 AM
Firstpage :
825
Lastpage :
829
Abstract :
In this paper, we present an electromagnetic analysis of ring-cavity-assisted amplified spontaneous emission in Er3 +-doped SiO2 (Er:SiO2 ). A horizontal slot geometry, consisting of a low-index Er:SiO2 layer embedded between high-index a-Si layers, allows for a planar ring-cavity design which maintains high optical confinement in the active Er:SiO2 material. The simulations are performed within the auxiliary differential equation-finite-difference time-domain (ADE-FDTD) scheme which couples the quantum mechanical light emission and amplification behavior of the Er:SiO2 with the electromagnetic device behavior. We present the enhanced spontaneous emission in waveguide-coupled ring cavities with varying coupling gaps. We provide an analysis of the relationship between cavity quality factor, coupling coefficient, and enhanced spontaneous emission.
Keywords :
amorphous semiconductors; differential equations; elemental semiconductors; erbium; finite difference time-domain analysis; laser cavity resonators; optical materials; quantum optics; ring lasers; silicon compounds; waveguide lasers; Si; SiO2:Er3+; active optical material; differential equation; electromagnetic analysis; finite-difference time-domain scheme; horizontal slot waveguide; lasing medium; quantum mechanical light emission; spontaneous emission amplification; waveguide coupled ring-cavity; Differential equations; Electromagnetic analysis; Electromagnetic coupling; Erbium; Geometrical optics; Optical design; Optical materials; Spontaneous emission; Stimulated emission; Time domain analysis; Finite-difference time-domain (FDTD) methods; optical planar waveguides; semiconductor device modeling; spontaneous emission;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.2009.2013208
Filename :
5038000
Link To Document :
