Silicon-based optoelectronics

Author

Soref, Richard A.

Author_Institution

Electromagn. & Reliability Directorate, Rome Air Dev. Center, Hanscom AFB, MA, USA

Volume

81

Issue

12

fYear

1993

fDate

12/1/1993 12:00:00 AM

Firstpage

1687

Lastpage

1706

Abstract

The decade of the 1990´s is an opportune time for scientists and engineers to create cost-effective silicon “superchips” that merge silicon photonics with advanced silicon electronics on a silicon substrate. We can expect significant electrooptical devices from Column IV materials (Si, Ge, C and Sn) for a host of applications. The best devices will use strained-layer epitaxy, doped heterostructures, and bandgap engineering of quantum-confined structures. This paper reviews Si-based photonic components and optoelectronic integration techniques, both hybrid and monolithic

Keywords

electro-optical devices; elemental semiconductors; integrated optoelectronics; semiconductor quantum wells; semiconductor superlattices; silicon; technological forecasting; Si; Si-based photonic components; bandgap engineering; doped heterostructures; electrooptical devices; hybrid integration; monolithic integration; optoelectronic integration techniques; quantum-confined structures; silicon substrate; silicon superchips; strained-layer epitaxy; Integrated optics; Optical devices; Optical materials; Optical modulation; Optoelectronic devices; Photonic band gap; Photonic integrated circuits; Silicon; Stimulated emission; Substrates;

fLanguage

English

Journal_Title

Proceedings of the IEEE

Publisher

ieee

ISSN

0018-9219

Type

jour

DOI

10.1109/5.248958

Filename

248958