Title :
GaAs HBT´s for high-speed digital integrated circuit applications
Author :
Chang, Christopher T M ; Yuan, Han-tzong
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
fDate :
12/1/1993 12:00:00 AM
Abstract :
GaAs HBT technology has emerged as one of the most important developments for digital circuits operating at clock frequencies of 100 MHz and higher. High-speed frequency dividers operating as high as 34.8 GHz and VLSI circuits as complex as 32-b CPU´s operating at 200-MHz clock rate have been demonstrated. This paper reviews the role of GaAs HBT technologies for high-speed digital IC applications. The requirements for high-speed IC´s and the characteristics of various HBT device structures and logic families are discussed. A summary of published results of the ultrahigh-speed circuits and the status of several high-speed VLSI circuits are presented to provide a guide for future developments
Keywords :
III-V semiconductors; VLSI; bipolar integrated circuits; digital integrated circuits; gallium arsenide; heterojunction bipolar transistors; integrated circuit technology; integrated logic circuits; reviews; GaAs; GaAs HBT technology; HBT device structures; digital integrated circuit applications; high-speed VLSI circuits; high-speed digital ICs; logic families; ultrahigh-speed circuits; Application specific integrated circuits; Clocks; Digital circuits; Digital integrated circuits; Frequency conversion; Gallium arsenide; Heterojunction bipolar transistors; High speed integrated circuits; Integrated circuit technology; Very large scale integration;
Journal_Title :
Proceedings of the IEEE
