• DocumentCode
    983783
  • Title

    GaAs HBT´s for analog circuits

  • Author

    Oyama, B.K. ; Wong, Brian P.

  • Author_Institution
    TRW Space & Electronics Group, Redondo Beach, CA, USA
  • Volume
    81
  • Issue
    12
  • fYear
    1993
  • fDate
    12/1/1993 12:00:00 AM
  • Firstpage
    1744
  • Lastpage
    1761
  • Abstract
    Silicon bipolar integrated circuit (IC) technology has dominated the analog IC world for over two decades. As the push for wider bandwidths with higher precision continues, the emergence of GaAs HBT technology is destined to challenge silicon bipolar´s domination at the high end of the analog market. This paper discusses the analog application areas best suited to GaAs HBT technology, points out its unique characteristics for analog circuits, describes the design issues for key analog building block circuits, and provides comparative examples of demonstrated state-of-the-art analog circuits. Finally, a projection of future direction in this application area is provided
  • Keywords
    III-V semiconductors; amplifiers; analogue processing circuits; analogue-digital conversion; bipolar integrated circuits; digital-analogue conversion; gallium arsenide; heterojunction bipolar transistors; integrated circuit technology; linear integrated circuits; military systems; ADC; DAC; GaAs; GaAs HBT technology; IC technology; amplifiers; analog IC; analog building block circuits; analog circuits; analog processing; design issues; future directions; military systems; Analog circuits; Analog integrated circuits; Bandwidth; Bipolar integrated circuits; Digital signal processing; Doppler radar; Gallium arsenide; Heterojunction bipolar transistors; Integrated circuit technology; Silicon;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/5.248962
  • Filename
    248962