DocumentCode
983783
Title
GaAs HBT´s for analog circuits
Author
Oyama, B.K. ; Wong, Brian P.
Author_Institution
TRW Space & Electronics Group, Redondo Beach, CA, USA
Volume
81
Issue
12
fYear
1993
fDate
12/1/1993 12:00:00 AM
Firstpage
1744
Lastpage
1761
Abstract
Silicon bipolar integrated circuit (IC) technology has dominated the analog IC world for over two decades. As the push for wider bandwidths with higher precision continues, the emergence of GaAs HBT technology is destined to challenge silicon bipolar´s domination at the high end of the analog market. This paper discusses the analog application areas best suited to GaAs HBT technology, points out its unique characteristics for analog circuits, describes the design issues for key analog building block circuits, and provides comparative examples of demonstrated state-of-the-art analog circuits. Finally, a projection of future direction in this application area is provided
Keywords
III-V semiconductors; amplifiers; analogue processing circuits; analogue-digital conversion; bipolar integrated circuits; digital-analogue conversion; gallium arsenide; heterojunction bipolar transistors; integrated circuit technology; linear integrated circuits; military systems; ADC; DAC; GaAs; GaAs HBT technology; IC technology; amplifiers; analog IC; analog building block circuits; analog circuits; analog processing; design issues; future directions; military systems; Analog circuits; Analog integrated circuits; Bandwidth; Bipolar integrated circuits; Digital signal processing; Doppler radar; Gallium arsenide; Heterojunction bipolar transistors; Integrated circuit technology; Silicon;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/5.248962
Filename
248962
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