DocumentCode :
983974
Title :
Design Theory of Optimum Negative-Resistance Amplifiers
Author :
Kuh, E.S. ; Patterson, J.D.
Author_Institution :
Dept. of Elec. Engrg., University of California, Berkeley, Calif.
Volume :
49
Issue :
6
fYear :
1961
fDate :
6/1/1961 12:00:00 AM
Firstpage :
1043
Lastpage :
1050
Abstract :
In this paper we consider general amplifiers obtained by imbedding a linear active 1-port device in arbitrary 3-ports. The active device is assumed to have a representation of a negative conductance -GD in parallel with a parasitic capacitance CD. We prove that for the lossless reciprocal imbedding, the transducer voltage gain is limited by ¿ S21¿ < ¿(1+e¿GD/¿0CD), where ¿0 is the angular bandwidth. For arbitrary passive imbedding, ¿S21¿ ¿ e¿GD/¿0CD. Synthesis methods to approach or achieve the optimum are presented. Other types of amplifier configurations are next considered. In each case, the optimum gain-bandwidth formula, synthesis procedure and some useful design curves are given.
Keywords :
Bandwidth; Diodes; Electron tubes; Network synthesis; Niobium; Parasitic capacitance; Reflection; Scattering; Transducers; Voltage;
fLanguage :
English
Journal_Title :
Proceedings of the IRE
Publisher :
ieee
ISSN :
0096-8390
Type :
jour
DOI :
10.1109/JRPROC.1961.287888
Filename :
4066451
Link To Document :
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