• DocumentCode
    984020
  • Title

    Analysis of radiative and nonradiative recombination law in lightly doped InGaAsP lasers

  • Author

    Thompson, G.H.B.

  • Author_Institution
    Standard Telecommunication Laboratories, Harlow, UK
  • Volume
    19
  • Issue
    5
  • fYear
    1983
  • Firstpage
    154
  • Lastpage
    155
  • Abstract
    A re-analysis of the recombination data of Su et al. on lightly doped InGaAsP lasers indicates that their figure for the Auger coefficient is uncertain and up to three times too low, does not support their claim of saturation in the radiative recombination, but confirms the presence of a second nonradiative mechanism more sensitively dependent on carrier concentration than the cube.
  • Keywords
    III-V semiconductors; carrier density; electron-hole recombination; gallium arsenide; indium compounds; semiconductor junction lasers; Auger coefficient; III-V semiconductor; carrier concentration; lightly doped InGaAsP lasers; nonradiative recombination; radiative recombination; recombination data; saturation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830108
  • Filename
    4247375
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=984020