High-performance modulation-doped GaAs integrated circuits with planar structures

Author

Lee, Charlotte P. ; Wang, W.I.

Author_Institution

Rockwell International, Microelectronics Research & Development Center, Thousand Oaks, USA

Volume

19

Issue

5

fYear

1983

Firstpage

155

Lastpage

157

Abstract

A planar process of using proton isolation for modulationdoped GaAs/GaAlAs integrated circuits is presented. Devices with very low contact resistance (~ 5 Ã— 10Â¿7 Â¿ cm2) and very high transconductance (~ 210 ms/mm) have been achieved. DCFL ring oscillators with 10 Â¿m switching FETs have been operated at Â¿ = 36.6 ps at room temperature and 27.3 ps at 77 K. The lowest speed-power product is 2.43 fJ per gate.

Keywords

III-V semiconductors; carrier mobility; contact resistance; digital integrated circuits; field effect integrated circuits; gallium arsenide; integrated circuit technology; large scale integration; molecular beam epitaxial growth; semiconductor doping; semiconductor growth; semiconductor technology; 77K operation; DCFL ring oscillators; GaAs/GaAlAs integrated circuits; III-V semiconductors; MBE; contact resistance; heterostructure devices; liquid N2 temperature operation; mobility enhancement; modulation doping; planar process; planar structures; proton isolation; room temperature operation; speed-power product; switching FETs; switching speed; transconductance;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19830109

Filename

4247376