Title :
GaAs integrated digital-to-analogue convertor for control of power dual-gate FETs
Author :
Saunier, Paul ; Kim, Bumki ; Frensley, W.R.
Author_Institution :
Texas Instruments Incorporated, Dallas, USA
Abstract :
We are reporting the design, fabrication and performance of a TTL compatible 4-bit GaAs integrated digital-to-analogue convertor with an output voltage between ¿2.8 V and +2.8 V. This circuit has been especially designed to control the gain of power dual-gate FETs by applying a voltage on the capacitively terminated second gate.
Keywords :
III-V semiconductors; digital-analogue conversion; field effect integrated circuits; gain control; gallium arsenide; microwave integrated circuits; 4 bit DAC; D/A convertors; FEIC; GaAs; III-V semiconductors; TTL compatible; capacitively terminated second gate; design; fabrication; gain control; monolithic microwave ICs; performance; power dual-gate FETs;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830113
