DocumentCode
984111
Title
Polarisation-dependent gain-current relationship in GaAs-AlGaAs MQW laser diodes
Author
Kobayashi, Hideo ; Iwamura, Hideyuki ; Saku, T. ; Otsuka, Kanji
Author_Institution
NTT, Musashino Electrical Communication Loboratory, Musashino, Japan
Volume
19
Issue
5
fYear
1983
Firstpage
166
Lastpage
168
Abstract
The polarisation-dependent gain spectra were measured for multi-quantum-well laser diodes. Differences in the gain-current relationship and in the peak gain wavelength between TE and TM polarisations are explained by a newly developed model.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; light polarisation; semiconductor junction lasers; GaAs-AlGaAs; III-V semiconductors; MQW laser diodes; TE polarisation; TM polarisation; gain-current relationship; model; multiquantum-well laser diodes; peak gain wavelength; polarisation-dependent gain spectra; semiconductor lasers;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19830116
Filename
4247398
Link To Document