• DocumentCode
    984111
  • Title

    Polarisation-dependent gain-current relationship in GaAs-AlGaAs MQW laser diodes

  • Author

    Kobayashi, Hideo ; Iwamura, Hideyuki ; Saku, T. ; Otsuka, Kanji

  • Author_Institution
    NTT, Musashino Electrical Communication Loboratory, Musashino, Japan
  • Volume
    19
  • Issue
    5
  • fYear
    1983
  • Firstpage
    166
  • Lastpage
    168
  • Abstract
    The polarisation-dependent gain spectra were measured for multi-quantum-well laser diodes. Differences in the gain-current relationship and in the peak gain wavelength between TE and TM polarisations are explained by a newly developed model.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; light polarisation; semiconductor junction lasers; GaAs-AlGaAs; III-V semiconductors; MQW laser diodes; TE polarisation; TM polarisation; gain-current relationship; model; multiquantum-well laser diodes; peak gain wavelength; polarisation-dependent gain spectra; semiconductor lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830116
  • Filename
    4247398