DocumentCode
984140
Title
Phase-locked (GaAl)As laser diode emitting 2.6 W CW from a single mirror
Author
Scifres, D.R. ; Lindstr¿¿m, C. ; Burnham, R.D. ; Streifer, W. ; Paoli, T.L.
Author_Institution
Xerox Polo Alto Research Centers, Palo Alto, USA
Volume
19
Issue
5
fYear
1983
Firstpage
169
Lastpage
171
Abstract
A phase-locked multiple-quantum-well (GaAl)As injection laser with a highly reflective rear facet coating and a low reflective front facet coating is reported to emit 2.6 W CW at room temperature from the front facet.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor junction lasers; CW; GaAlAs; III-V semiconductor; MQW laser; highly reflective rear facet coating; laser diode; low reflective front facet coating; multiple quantum well laser; phase locked laser; power output 2.6 W CW; room temperature operation; semiconductor laser arrays; single mirror; wavelength 836.5 nm;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19830118
Filename
4247404
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