Title :
Measurement of screened voltages by electron-beam-induced conductivity (EBIC)
Author_Institution :
Siemens AG, Forschungslaboratorien, Mÿnchen, West Germany
Abstract :
A new method is introduced to measure screened voltages by EBIC. Some applications are shown.
Keywords :
electron beam applications; insulated gate field effect transistors; p-n junctions; semiconductor device testing; voltage measurement; EBIC; MOS transistors; applications; conducting layers; electron-beam-induced conductivity; insulating layers; internal voltage measurement; p-n junctions; screened voltage measurement; semiconductor device investigation; spatial resolution; voltage resolution; voltages of buried interconnections;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830123
