Title :
Overview of on-chip electrostatic discharge protection design with SCR-based devices in CMOS integrated circuits
Author :
Ker, Ming-Dou ; Hsu, Kuo-Chun
Author_Institution :
Nanoelectronics & Gigascale Syst. Lab., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
fDate :
6/1/2005 12:00:00 AM
Abstract :
An overview on the electrostatic discharge (ESD) protection circuits by using the silicon controlled rectifier (SCR)-based devices in CMOS ICs is presented. The history and evolution of SCR device used for on-chip ESD protection is introduced. Moreover, two practical problems (higher switching voltage and transient-induced latchup issue) limiting the use of SCR-based devices in on-chip ESD protection are reported. Some modified device structures and trigger-assist circuit techniques to reduce the switching voltage of SCR-based devices are discussed. The solutions to overcome latchup issue in the SCR-based devices are also discussed to safely apply the SCR-based devices for on-chip ESD protection in CMOS IC products.
Keywords :
CMOS integrated circuits; electrostatic discharge; integrated circuit design; overvoltage protection; thyristors; CMOS integrated circuits; SCR based devices; latchup; on chip electrostatic discharge protection; voltage switching; Breakdown voltage; CMOS integrated circuits; CMOS technology; Dielectric breakdown; Electrostatic discharge; History; Protection; Stress; Switching circuits; Thyristors; ESD protection circuits; Electrostatic discharge (ESD); latchup; silicon controlled rectifier (SCR);
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
DOI :
10.1109/TDMR.2005.846824