DocumentCode
984202
Title
Dynamic behaviour of a GaAs-AlGaAs MQW laser diode
Author
Iwamura, Hideyuki ; Saku, T. ; Ishibashi, Takayuki ; Otsuka, Kanji ; Horikoshi, Y.
Author_Institution
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Volume
19
Issue
5
fYear
1983
Firstpage
180
Lastpage
181
Abstract
A comparative study is given on the dynamic properties existing between a GaAs-AlGaAs multi-quantum-well (MQW) laser diode fabricated from an MBE-grown wafer and a conventional double-heterostructure laser diode. Spectral broadening and wavelength shift associated with deep injection current modulation were found to be much smaller in MQW laser diodes than in conventional DH laser diodes.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor junction lasers; DH laser diodes; GaAs-AlGaAs; III-V semiconductor; MBE; MQW laser diode; comparative study; deep injection current modulation; dynamic properties; multiquantum-well; semiconductor lasers; spectral broadening; wavelength shift;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19830125
Filename
4247415
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