• DocumentCode
    984203
  • Title

    Liquid and vapor phase silanes coating for the release of thin film MEMS

  • Author

    Parvais, B. ; Pallandre, A. ; Jonas, A.M. ; Raskin, J.P.

  • Author_Institution
    Res. Center in Micro & Nanoscopic Mater. & Electron. Devices, Univ. Catholique de Louvain, Louvain-la-Neuve, Belgium
  • Volume
    5
  • Issue
    2
  • fYear
    2005
  • fDate
    6/1/2005 12:00:00 AM
  • Firstpage
    250
  • Lastpage
    254
  • Abstract
    Stiction remains one of the biggest reliability problems in the fabrication of microelectromechanical systems (MEMS). This work investigates the techniques adapted to release thin-film devices (100 nm thick) and submicron gaps MEMS. First, a CMOS compatible wet release process was developed, using nonchlorinated silanes coating providing a high hydrophobicity (contact angle in the range of 110°). Second, a vapor phase release process based on the same chemistry is shown to be adequate to release thin-film beams from a silicon-on-insulator wafer, where the wet process failed. This is to the authors´ knowledge the first time that an in-use stiction-free release process has been demonstrated for such thin structures. The layers resist up to 300°C without damage and X-ray reflectivity confirmed that homogeneous monolayers were obtained.
  • Keywords
    liquid phase deposited coatings; micromechanical devices; reliability; silicon compounds; stiction; thin film devices; vapour deposited coatings; 100 nm; 300 C; CMOS compatible wet release process; MEMS fabrication; SiH4; hydrophobicity; reliability; silane coating; stiction; thin film MEMS; x-ray reflectivity; CMOS process; Chemistry; Coatings; Fabrication; Microelectromechanical systems; Micromechanical devices; Semiconductor thin films; Silicon on insulator technology; Thin film devices; Transistors; Hydrophobization; MEMS; release process; silane; stiction; thin films;
  • fLanguage
    English
  • Journal_Title
    Device and Materials Reliability, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1530-4388
  • Type

    jour

  • DOI
    10.1109/TDMR.2005.846976
  • Filename
    1458741