Title :
Bulk unipolar diodes in MBE GaAs
Author :
Woodcock, J.M. ; Harris, J.J.
Author_Institution :
Philips Research Laboratories, Redhill, UK
Abstract :
Bulk unipolar (camel) diodes in GaAs have been made using thin, buried p+ layers doped with beryllium and grown by MBE. Barrier heights in the range 0.55 eV to 0.94 eV have been obtained by varying the p+-layer thickness. In all cases the ideality factors of the diodes were less than 1.5.
Keywords :
III-V semiconductors; gallium arsenide; molecular beam epitaxial growth; semiconductor device models; Be doping; GaAs; III-V semiconductors; MBE; barrier heights range; bulk unipolar diodes; buried p+ layers; camel diodes; fabrication; ideality factors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830126
