Title :
Transferred-electron effect in In0.53Ga0.47As
Author :
Kowalsky, W. ; Schlachetzki, A.
Author_Institution :
Technische Universitÿt Braunschweig, Institut fÿr Hochfrequenztechnik, Braunschweig, West Germany
Abstract :
The transferred-electron effect in In0.53Ga0.47As is demonstrated by observation for the first time in the travelling-domain mode. Current pulses of more than 70% are found. From velocity/field characteristics the peak velocity is determined as (2.2 ± 0.3) × 107 cm/s. The temperature dependence of the peak current is measured.
Keywords :
Gunn effect; III-V semiconductors; gallium arsenide; indium compounds; III-V semiconductor; In0.53Ga0.47As; peak current; peak velocity; temperature dependence; transferred-electron effect; travelling-domain mode; velocity/field characteristics;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830131
