Title :
Gate oxide breakdown on nMOSFET cutoff frequency and breakdown resistance
Author :
Liu, Yi ; Sadat, Anwar ; Yuan, Jiann S.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Central Florida, Orlando, FL, USA
fDate :
6/1/2005 12:00:00 AM
Abstract :
Gate oxide breakdown effect on CMOS RF devices has been examined. The breakdown spot resistance and total gate capacitance of nMOS transistors decrease with stress. The analytical equation of cutoff frequency including the gate oxide breakdown effect is derived. The impact of oxide breakdown on the performance of an LC oscillator is evaluated. The oscillation frequency of the LC oscillator increases with oxide breakdown.
Keywords :
CMOS integrated circuits; MOSFET; capacitance; failure analysis; semiconductor device breakdown; breakdown resistance; cutoff frequency; gate capacitance; gate oxide breakdown; nMOSFET; CMOS technology; Capacitance; Cutoff frequency; Electric breakdown; Equations; Equivalent circuits; MOSFET circuits; Oscillators; Radio frequency; Stress; Breakdown spot resistance; LC oscillator; cutoff frequency; gate capacitance; gate oxide breakdown; nMOS transistors; oscillation frequency;
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
DOI :
10.1109/TDMR.2005.847872
