Title :
Monolithic integration of InGaAsP/InP LED and transistor¿a light-coupled bistable electro-optical device
Author :
Grothe, H. ; Proebster, W.
Author_Institution :
Technische Universitÿt Mÿnchen, Lehrstuhl fÿr Allgemeine Elektrotechnik und Angewandte Elektronik, Mÿnchen, West Germany
Abstract :
A new bistable electro-optical integrated three-terminal InGaAsP/InP LED-transistor device is presented. Bistability is obtained by coupling part of the emitted LED light into the transistor base. The light output can be switched on and off by relatively low current pulses with 50 ns duration.
Keywords :
III-V semiconductors; electro-optical devices; gallium arsenide; indium compounds; integrated optics; light emitting diodes; monolithic integrated circuits; optical bistability; electrooptical device; light-coupled bistable electro-optical device; monolithic integration; three-terminal InGaAsP/InP LED-transistor device;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19830135
