• DocumentCode
    984296
  • Title

    Monolithic integration of InGaAsP/InP LED and transistor¿a light-coupled bistable electro-optical device

  • Author

    Grothe, H. ; Proebster, W.

  • Author_Institution
    Technische Universitÿt Mÿnchen, Lehrstuhl fÿr Allgemeine Elektrotechnik und Angewandte Elektronik, Mÿnchen, West Germany
  • Volume
    19
  • Issue
    6
  • fYear
    1983
  • Firstpage
    194
  • Lastpage
    196
  • Abstract
    A new bistable electro-optical integrated three-terminal InGaAsP/InP LED-transistor device is presented. Bistability is obtained by coupling part of the emitted LED light into the transistor base. The light output can be switched on and off by relatively low current pulses with 50 ns duration.
  • Keywords
    III-V semiconductors; electro-optical devices; gallium arsenide; indium compounds; integrated optics; light emitting diodes; monolithic integrated circuits; optical bistability; electrooptical device; light-coupled bistable electro-optical device; monolithic integration; three-terminal InGaAsP/InP LED-transistor device;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19830135
  • Filename
    4247470
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=984296