DocumentCode
984299
Title
Author\´s reply [to comments on "Flash memory under cosmic and alpha irradiation"]
Author
Fogle, Adam ; Darling, Don ; Blish, Richard C., II ; Daszko, Gene
Author_Institution
Spansion & Adv. Micro Devices, Sunnyvale, CA, USA
Volume
5
Issue
2
fYear
2005
fDate
6/1/2005 12:00:00 AM
Firstpage
297
Abstract
The authors thank G. Cellere and A. Paccagnella for their comments (see ibid., vol.5, no.2, p.296-7, June 2005) and for taking the time to thoroughly review their paper (see ibid., vol.4, no.3, p.371-6, Sep. 2004). The original intent of the experiment and paper was to measure and report the overall susceptibility of flash memory to upsets caused by neutron and proton irradiation. They did not care to speculate on root cause(s) because the failure rate was small relative to other elements of an electronic system (SRAM, random logic, etc).
Keywords
alpha-particle effects; cosmic rays; flash memories; neutron effects; proton effects; alpha irradiation; cosmic irradiation; flash memories; ionizing radiation; neutron irradiation; proton irradiation; Charge measurement; Current measurement; Flash memory; Logic devices; Neutrons; Protons; Random access memory;
fLanguage
English
Journal_Title
Device and Materials Reliability, IEEE Transactions on
Publisher
ieee
ISSN
1530-4388
Type
jour
DOI
10.1109/TDMR.2005.848068
Filename
1458749
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