DocumentCode :
984299
Title :
Author\´s reply [to comments on "Flash memory under cosmic and alpha irradiation"]
Author :
Fogle, Adam ; Darling, Don ; Blish, Richard C., II ; Daszko, Gene
Author_Institution :
Spansion & Adv. Micro Devices, Sunnyvale, CA, USA
Volume :
5
Issue :
2
fYear :
2005
fDate :
6/1/2005 12:00:00 AM
Firstpage :
297
Abstract :
The authors thank G. Cellere and A. Paccagnella for their comments (see ibid., vol.5, no.2, p.296-7, June 2005) and for taking the time to thoroughly review their paper (see ibid., vol.4, no.3, p.371-6, Sep. 2004). The original intent of the experiment and paper was to measure and report the overall susceptibility of flash memory to upsets caused by neutron and proton irradiation. They did not care to speculate on root cause(s) because the failure rate was small relative to other elements of an electronic system (SRAM, random logic, etc).
Keywords :
alpha-particle effects; cosmic rays; flash memories; neutron effects; proton effects; alpha irradiation; cosmic irradiation; flash memories; ionizing radiation; neutron irradiation; proton irradiation; Charge measurement; Current measurement; Flash memory; Logic devices; Neutrons; Protons; Random access memory;
fLanguage :
English
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
Publisher :
ieee
ISSN :
1530-4388
Type :
jour
DOI :
10.1109/TDMR.2005.848068
Filename :
1458749
Link To Document :
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