• DocumentCode
    984299
  • Title

    Author\´s reply [to comments on "Flash memory under cosmic and alpha irradiation"]

  • Author

    Fogle, Adam ; Darling, Don ; Blish, Richard C., II ; Daszko, Gene

  • Author_Institution
    Spansion & Adv. Micro Devices, Sunnyvale, CA, USA
  • Volume
    5
  • Issue
    2
  • fYear
    2005
  • fDate
    6/1/2005 12:00:00 AM
  • Firstpage
    297
  • Abstract
    The authors thank G. Cellere and A. Paccagnella for their comments (see ibid., vol.5, no.2, p.296-7, June 2005) and for taking the time to thoroughly review their paper (see ibid., vol.4, no.3, p.371-6, Sep. 2004). The original intent of the experiment and paper was to measure and report the overall susceptibility of flash memory to upsets caused by neutron and proton irradiation. They did not care to speculate on root cause(s) because the failure rate was small relative to other elements of an electronic system (SRAM, random logic, etc).
  • Keywords
    alpha-particle effects; cosmic rays; flash memories; neutron effects; proton effects; alpha irradiation; cosmic irradiation; flash memories; ionizing radiation; neutron irradiation; proton irradiation; Charge measurement; Current measurement; Flash memory; Logic devices; Neutrons; Protons; Random access memory;
  • fLanguage
    English
  • Journal_Title
    Device and Materials Reliability, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1530-4388
  • Type

    jour

  • DOI
    10.1109/TDMR.2005.848068
  • Filename
    1458749